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Resistive switching characteristics of Ti/ZrO_2/Pt RRAM device 被引量：1

Resistive switching characteristics of Ti/ZrO_2/Pt RRAM device
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摘要 In this paper, the bipolar resistive switching characteristic is reported in Ti/ZrO2/Pt resistive switching memory de- vices. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The conduction mechanisms for low and high resistance states are dominated by the ohmic conduc- tion and the trap-controlled space charge limited current （SCLC） mechanism, respectively. The effect of a set compliance current on the switching parameters is also studied： the low resistance and reset current are linearly dependent on the set compliance current in the log-log scale coordinate; and the set and reset voltage increase slightly with the increase of the set compliance current. A series circuit model is proposed to explain the effect of the set compliance current on the resistive switching behaviors. In this paper, the bipolar resistive switching characteristic is reported in Ti/ZrO2/Pt resistive switching memory de- vices. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The conduction mechanisms for low and high resistance states are dominated by the ohmic conduc- tion and the trap-controlled space charge limited current （SCLC） mechanism, respectively. The effect of a set compliance current on the switching parameters is also studied： the low resistance and reset current are linearly dependent on the set compliance current in the log-log scale coordinate; and the set and reset voltage increase slightly with the increase of the set compliance current. A series circuit model is proposed to explain the effect of the set compliance current on the resistive switching behaviors.
作者 雷晓艺 刘红侠 高海霞 杨哈妮 王国明 龙世兵 马晓华 刘明
机构地区 Key Laboratory of Wide Bandgap Semiconductor Materials and Devices School of Advanced Materials and Nanotechnology Laboratory of Nano-fabrication and Novel Devices Integrated Technology Tianjin Key Laboratory of Film Electronic and Communication Devices
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第11期507-511,共5页 中国物理B（英文版）
基金 supported by the National Basic Research Program of China(Grant No.2011CBA00606) the National Natural Science Foundation of China(Grant Nos.61106106,11304237,61376099,and 11235008) the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant Nos.20130203130002 and 20110203110012)
关键词 resistive random access memory （RRAM） resistive switching （RS） conductive filament （CF） compliance current resistive random access memory （RRAM）, resistive switching （RS）, conductive filament （CF）,compliance current
分类号 TM564 [电气工程—电器]
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  • 1Li Y T, Long S B, Zhang M H, Liu Q, Shao L B, Zhang S, Wang Y, Zuo Q Y, Liu S and Liu M 2010 IEEE Electron Dev. Lett. 31 117.
  • 2Puglisi F M, Larcher L, Bersuker G, Padovani A and Pavan P 2013 IEEE Electron Dev. Lett. 34 387.
  • 3Wong H S P, Lee H Y, Yu S M, Chen Y S, Wu Y, Chen P S, Lee B, Chen F T and Tsai M J 2012 Proc. IEEE 100 1951.
  • 4Liu M, Abid Z, Wang W, He X L, Liu Q and Guan W H 2009 Appl. Phys. Lett. 94 233106.
  • 5Sun J, Liu Q, Xie H W, Wu X, Xu F, Xu T, Long S B, Lü H B, Li Y T, Sun L T and Liu M 2013 Appl. Phys. Lett. 102 053502.
  • 6Chang K C, Tsai T M, Chang T C, Wu H H, Chen J H, Syu Y E, Chang G W, Chu T J, Liu G R, Su Y T, Chen M C, Pan J H, Chen J Y, Tung C W, Huang H C, Tai Y H, Gan D S and Sze S M 2013 IEEE Electron Dev. Lett. 34 399.
  • 7Liu C Y, Wu P H, Wang A, Jang W Y, Young J C, Chiu K Y and Tseng T Y 2005 IEEE Electron Dev. Lett. 26 351.
  • 8Zhuang W W, Pan W, Ulrich B D, Lee J J, Stecker L, Burmaster A, Evans D R, Hsu S T, Tajiri M, Shimaoka A, Inoue K, Naka T, Awaya N, Sakiyama K, Wang Y, Liu S Q, Wu N J and Ignatiev A 2002 IEDM Tech. Dig. 193.
  • 9Zhang F, Lin Y B, W H, Miao Q, Gong J J, Chen J P, Wu S J, Zeng M, Gao X S and Liu J M 2014 Chin. Phys. B 23 027702.
  • 10Garcia V, Fusil S, Bouzehouane K, Enouz-Vedrenne S, Mathur N D, Barthelemy A and Bibes M 2009 Nature 460 81.

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Chinese Physics B
2014年 第11期

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