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Analysis of flatband voltage shift of metal/high-k/SiO_2/Si stack based on energy band alignment of entire gate stack

Analysis of flatband voltage shift of metal/high-k/SiO_2/Si stack based on energy band alignment of entire gate stack
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摘要 A theoretical model of flatband voltage （VFB） of metal/high-k/Si02/Si stack is proposed based on band alignment of entire gate stack, i.e., the VFB is obtained by simultaneously considering band alignments of metal/high-k, high-k/SiO2 and SiO2/Si interfaces, and their interactions. Then the VFB of TiN/HfO2/SiO2/Si stack is experimentally obtained and theoretically investigated by this model. The theoretical calculations are in good agreement with the experimental results. Furthermore, both positive VFB shift of TiN/HfO2/SiO2/Si stack and Fermi level pinning are successfully interpreted and attributed to the dielectric contact induced gap states at TiN/HfO2 and HfO2/SiO2 interfaces. A theoretical model of flatband voltage （VFB） of metal/high-k/Si02/Si stack is proposed based on band alignment of entire gate stack, i.e., the VFB is obtained by simultaneously considering band alignments of metal/high-k, high-k/SiO2 and SiO2/Si interfaces, and their interactions. Then the VFB of TiN/HfO2/SiO2/Si stack is experimentally obtained and theoretically investigated by this model. The theoretical calculations are in good agreement with the experimental results. Furthermore, both positive VFB shift of TiN/HfO2/SiO2/Si stack and Fermi level pinning are successfully interpreted and attributed to the dielectric contact induced gap states at TiN/HfO2 and HfO2/SiO2 interfaces.
作者 韩锴 王晓磊 徐永贵 杨红 王文武
机构地区 Department of Physics and Electronic Science Key Laboratory of Microelectronics Devices & Integrated Technology
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第11期536-540,共5页 中国物理B（英文版）
基金 supported by the National Natural Science of China(Grant Nos.61176091 and 50932001)
关键词 metal gate high-k dielectric band alignment Vfb shift metal gate, high-k dielectric, band alignment, Vfb shift
分类号 O481.1 [理学—固体物理]
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Chinese Physics B
2014年 第11期

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