nc-Si/c-Si异质结太阳电池优化设计分析

ANALYSIS OF THE OPTIMIZATION DESIGN FOR nc-Si/c-Si HETEROJUNCTION STRUCTURE SOLAR CELLS

分析影响p+(nc-Si)/i(a-Si)/n(c-Si)异质结太阳电池性能的主要因素,获得纳米硅薄膜杂质浓度、本征层厚度以及背场对电池性能的影响规律。结果表明,当纳米硅薄膜中掺杂浓度增大时,该层大部分区域电场强度变大,短路电流和开路电压增大,有利于提高电池转换效率。优化的掺杂浓度应大于1×1018cm-3。当i层厚度大于30 nm时,电池转换效率η和电池填充因子FF急剧下降,优化的最佳厚度为10 nm。研究加入非晶硅背场提高电池效率的新途径,当引入厚10 nm的a-Si∶H(n+)背面场后,电池转换效率由21.677%提高到24.163%。

The effects of the thickness of intrinsic layer and back surface field on nc-Si/c-Si HIT（Heterojunction with an Intrinsic Thin layer） solar cell performance were discussed. The results showed that with the increase of doping density in p layer, the electric field in most region of this layer become stronger. Meanwhile, it helps to improve the solar cell effi- ciency because the inner electric field in p layer, short circuit current and open circuit voltage are all increased. The thickness of intrinsic layer has significant influence on solar cells. The battery efficiency （~/） and fill factor （FF） de- crease sharply when the thickness is more than 30 nm. Based on this, the optimal thickness of intrinsic layer is 10 nm. Fi- nally analyzed the effect of a-Si back surface field on solar cells, the battery efficiency is improved from 21.677% to 24.163% after adding a-Si back surface field, the thickness of which is 10 nm.