用氢化物气相外延(HVPE)法生长的氮化铟薄膜的性质研究

Study the properties of the InN films grown by hydride vapor phase epitaxy(HVPE)

在自制设备上用氢化物气相外延(HVPE)方法在α-Al_2O_3以及GaN/α-Al_2O_3衬底上生长了InN薄膜,并对其性质进行了研究。重点研究了生长温度的变化对所获得的InN薄膜的影响,并利用X射线衍射研究了InN薄膜的结构,用扫描电子显微镜研究了其表面性质,用霍尔测量研究了其电学性质。x射线衍射的结果表明,直接在α-Al_2O_3上生长得到的是InN多晶薄膜;而在GaN/α-Al_2O_3上得到的InN薄膜都只有(0002)取向,并且没有金属In或是In相关的团簇存在。综合分析可以发现,在650℃时无法得到InN薄膜,而在温度550℃时生长的InN薄膜具有光滑的表面和最好的晶体质量。

Some InN films were grown on both α-Al2O3 templates and GaN/α-Al2O3 templates by using the method of hydride vapor phase epitaxy（HVPE） in the temperature range from 500 to 650℃. The techniqes of x-ray diffractometry （XRD）, scanning electron microscopy （SEM） and Hall measurements were performed to investigate the structural, electrical and surface properties of InN films. The XRD results revealed that the films grown directly on α-Al2O3 were polycrystalline and the grown films on GaN/α-Al2O3 templates were only InN （0002） oriented and had no metallic In or polycrystalline inclusions. InN growth is not observed at growth temperatures of 650℃, and InN films with smooth surfaces and good crystal quality could be obtained at the growth temperature of 550℃.