硅基IV族光电器件研究进展(二)——光电探测器

Progress in the Study of Si-Based Group IV Optoelectronic Devices(Ⅱ)——Photodetectors

基于Ge、GeSn等IV族材料的硅基探测器与Si CMOS工艺兼容性好,成本低廉,并且易于与硅基波导器件集成,因而具有非常重要的应用价值。介绍了中国科学院半导体研究所在相关硅基IV族合金材料外延制备及相关器件方面的研究,重点介绍在硅基Ge面入射探测器、波导型探测器、吸收电荷倍增分离型(SACM)结构雪崩光电探测器以及GeSn光电探测器方面的一些研究进展。

Group IV material based photodetectors, such as the Si/Ge and Si/GeSn photodetectors, have the advantages of lower cost, high reliability, compatibility with CMOS technology and integration with the waveguide devices. Therefore it can be widely applied in the photo detection systems. Our recent progress on the Group IV material epitaxy and the device application on photodetectors is introduced. The emphasis is on the advance of the normal- incident/waveguide Si/Ge photodetectors, SACM avanlanche photodetectors and GeSn photodetectors.