4H-SiC无线无源高温压力传感器设计

Design of 4H-SiC wireless passive high temperature pressure sensor

高温压力传感器研制的主要目的是解决高温恶劣环境下的压力测量问题,SiC是制造高温压力传感器的理想材料,结合薄膜技术与陶瓷厚膜技术,提出了一种新型的4H-SiC无线无源电容式高温压力传感器设计方案。应用Ansys有限元分析软件进行仿真,600℃时灵敏度为2.65 MHz/bar,说明传感器在高温下具有较高的灵敏度,对制备过程中的关键工艺——SiC深刻蚀进行了验证,刻蚀深度达到124μm,满足传感器制备要求。

The main purpose of the development of high-temperature pressure sensor is to solve the pressure measurement problems in high-temperature harsh environments,SiC is an ideal material for manufacturing high temperature pressure sensor.Combined the technology of thin film and ceramic thick-film technology,a new design of 4H-SiC capacitive wireless passive high temperature pressure sensor is introduced in this paper.The Ansys finite element analysis software is utilized to simulate,the sensitivity of the capacitance chip is 2.65 MHz/bar at 600 ℃,which proves that the sensor has relatively high sensitivity under high temperature.The key process of preparation—SiC deep etch is verified,etching depth reaches 124 um,meets the requirements of sensor preparation.