基于瞬态热阻抗的不同电流对MOV芯片散热能力的影响

Influence of Different Current Based on Transient Thermal Impedance Model on Heat Dissipation Potential of the Metal Oxide Varistor

设计实验,分析了相同片径的MOV芯片通过不同电流值时瞬态热阻抗值随温度的变化关系,利用瞬态热阻抗模型研究了不同电流对MOV芯片瞬时散热能力的影响。实验结果表明,MOV芯片热熔穿过程中,MOV芯片散热能力与通过电流值有关,给出了一种研究MOV芯片热劣化的新方法。

An experiment was designed to analyze the relationship between temperature and the transient thermal impedance value caused by different current, transient thermal impedance model was used to study the influence of different current on transient heat dissipation potential of MOV, the results show that the heat dissipation potential of MOV is related to the current through the MOV chip. A new method is provided to study the thermal degradation process.