化学机械抛光中化学作用和机械作用协同的实验研究

Experimental Study on Synergy of Chemical-Mechanical Effect in Chemical Mechanical Polishing

借助现代实验仪器在微纳量级模拟化学机械抛光工况条件,采集摩擦界面的实时摩擦因数,研究单晶硅片化学机械抛光中的化学作用和机械作用的协同及相互影响关系.研究结果表明:在一定的化学机械抛光工艺条件下,去离子水和过氧化氢的化学作用及抛光正压力与滑划速度的机械作用对化学机械抛光的材料去除过程有着不同的影响.进一步分析研究获得了化学和机械作用协同的工艺参数条件:当抛光正压力为70mN、滑划速度为8.00mm/s时,抛光效果最优.

The relationship of chemical effects and mechanical effects in a chemical mechanical polishing （CMP） process of single crystal silicon wafer was studied based on the simulation of operational conditions in CMP by using modern experimental devices in micro- and nano- scale. The real-time friction coefficients in the frictional interface were collected. The research results indicate that under certain CMP operational condition, the influence on material removal process which caused by the chemical effects of deionized water and hydrogen peroxide is different from the influence caused by the mechanical effects of polishing normal load and sliding speed in CMP process. The optimal processing parameters are obtained from the experiments. When CMP is operated at polishing normal load 70 mN and sliding speed 8. 00 mm/s, the chemical effects and the mechanical effects in CMP process are synergistic, the polishing result is optimal.