InGaAs/GaAs应变量子阱的发光特性研究

Research on Photoluminescence Properties of InGaAs/GaAs Strained Quantum Well

利用低压金属有机化学气相沉积技术(LP-MOCVD)生长InGaAs/GaAs单量子阱(SQW),通过改变生长速率、优化生长温度和V/III比改善了量子阱样品的室温光致发光(PL)特性。测试结果表明,当生长温度为600℃、生长速率为1.15μm/h时,生长的量子阱PL谱较好,增加V/III比能够提高量子阱的发光强度。实验分析了在不同的In气相比条件下,生长速率对量子阱质量的影响,利用模型解释了高In气相比时,随着生长速率增加PL谱蓝移现象消失的原因。

Strained InGaAs/GaAs single quantum wells （SQWs） are grown by the low pressure metal-organic chemical vapor deposition （LP-MOCVD）. The experimental results show that the photoluminescence （PL） emission of InGaAs/GaAs SQW can be greatly improved by optimizing the growth rate, V/Ⅲ ratio and temperature. It is found that the QW structures grown at the growth temperature of 600 -C and the growth rate of 1.15 μm/h exhibit better PL emission, stronger PL intensity with higher V/Ⅲ ratio. The reason why the blue shift phenomenon of PL spectrum disappear when the InGas ratio is higher is explained by a model.