摘要
This paper presents the design and implement ofa CMOS smart temperature sensor, which consists of a low power analog front-end and a 12-bit low-power successive approximation register （SAR） analog-to-digital converter （ADC）. The analog front-end generates a proportional-to-absolute-temperature （PTAT） voltage with MOS- FET circuits operating in the sub-threshold region. A reference voltage is also generated and optimized in order to minimize the temperature error and the 12-bit SAR ADC is used to digitize the PTAT voltage. Using 0.18 μm CMOS technology, measurement results show that the temperature error is -0.69/＋0.85 ℃ after one-point calibra- tion over a temperature range of-40 to 100 ℃. Under a conversion speed of 1K samples/s, the power consumption is only 2.02 μW while the chip area is 230 × 225 μm2, and it is suitable for RFID application.
This paper presents the design and implement ofa CMOS smart temperature sensor, which consists of a low power analog front-end and a 12-bit low-power successive approximation register （SAR） analog-to-digital converter （ADC）. The analog front-end generates a proportional-to-absolute-temperature （PTAT） voltage with MOS- FET circuits operating in the sub-threshold region. A reference voltage is also generated and optimized in order to minimize the temperature error and the 12-bit SAR ADC is used to digitize the PTAT voltage. Using 0.18 μm CMOS technology, measurement results show that the temperature error is -0.69/＋0.85 ℃ after one-point calibra- tion over a temperature range of-40 to 100 ℃. Under a conversion speed of 1K samples/s, the power consumption is only 2.02 μW while the chip area is 230 × 225 μm2, and it is suitable for RFID application.
基金
supported by the Wuxi Special Funds for Development of Internet of Things of China(No.0414B011601130083PB)
