摘要
绝缘栅双极型晶体管(IGBT)的死区时间设置通常是采用Infenion技术文档中的计算式来计算。但该计算式并没有考虑不同负载时的情形,可能会导致设置不合理。为此,首先分析了IGBT死区时间设置对穿通发生区域的影响,然后在不同负载条件下采用实验的方法测试得到了IGBT死区时间设置,并与计算式得到的理论值进行了比较。结果表明:阻性负载时必须考虑关断时的下降时间;而感性负载时只需取关断延时;空载时的测试结果不能作为设计参考。由此,对不同负载条件下IGBT死区时间设置的计算式进行了修正,并分析了计算式产生差别的原因。
The dead-time setting of insulated gate bipolar transistor（IGBT） widely adopts the formula offered in the Infenion technical documents. However, the formula does not take the variation of load conditions into account, so it is possible to result in unreasonable settings. Regarding this issue, we analyzed the influence of dead-time setting on the shoot-through regions, and conducted experiments of different loads to determine the dead time setting. The results were compared with the theoretical values obtained from the Infenion formula. It is concluded that it is necessary to consider the fall duration of turnoff process for resistance loads, while considering the delay in the same duration is enough for inductance load. The test results under no-load situation are not suggested for reference. Therefore, we modified the Infenion formula according to various loads condition, and analyzed the reasons of the difference between the modified formulas.
出处
《高电压技术》
EI
CAS
CSCD
北大核心
2014年第11期3584-3589,共6页
High Voltage Engineering
基金
国家自然科学基金(50737004
51277178)~~
