GaAs基大功率半导体激光器无氧解理钝化技术研究

Anaerobic Cleaving Passivation Technology Research on GaAs High Power Semiconductor Laser

大功率半导体激光器失效的一个主要原因是半导体激光器的腔面退化,由于空气中解理时氧化而引起。针对性地设计了一种与磁控溅射台配合使用的惰性载气保护条件下的无氧解理操作台。采用磁控反应溅射腔面SiNx钝化膜工艺,获得了最高输出功率比未镀膜的器件高65.7%,比湿法钝化技术的器件提高约21%的器件。证明无氧解理SiNx钝化技术是一种有效的减少腔面界面态,提高大功率半导体激光器COD阈值的技术手段。

One of the main reasons for the failure of high power semiconductor laser which cavity surface degraded due to air oxidation caused by cleavage. For this, we designed an anaerobic cleaving console under the protection of inert carrier gas with the magnetron sputtering system. Reactive magnetron sputtering technology was used to make a SiNx SiNx cavity passivation film. The highest output power achieved 65.7% more than uncoated device. It also improved the device of about 21% more than wet passivation technology device. Anaerobic cleaving and SiNx passivation is an effec-tive technology to reduce and interface state on cavity surface and improve the COD threshold of high power semicon-ductor laser.