摘要
A high-power cw end-pumped laser device is demonstrated with a slab crystal of Nd：GdVO4 operating at 1063nm. Diode laser stacks at 880nm are used to pump Nd：GdVO4 into emitting level 4^F3/2. The 149 W output power is presented when the absorbed pump power is 390 W and the optical-to-optieal conversion efficiency is 38.2%. When the output power is 120 W, the M^2 factors are 2.3 in both directions. Additionally, mode overlap inside the resonator is analyzed to explain the beam quality deterioration.
A high-power cw end-pumped laser device is demonstrated with a slab crystal of Nd：GdVO4 operating at 1063nm. Diode laser stacks at 880nm are used to pump Nd：GdVO4 into emitting level 4^F3/2. The 149 W output power is presented when the absorbed pump power is 390 W and the optical-to-optieal conversion efficiency is 38.2%. When the output power is 120 W, the M^2 factors are 2.3 in both directions. Additionally, mode overlap inside the resonator is analyzed to explain the beam quality deterioration.
