摘要
为了抑制高功率盒形窗内的次级电子倍增效应,研究了一种刻周期半圆弧槽窗片结构.通过对槽内电场进行分析,证明了半圆弧状槽可以有效避免尖锐边界的局部场增强效应.利用蒙特卡罗随机算法对槽内的次级电子倍增效应进行数值模拟,跟踪次级电子的轨迹及发展趋势,获得了不同槽宽所对应的抑制次级电子倍增最低电场强度.讨论了法向电场对半圆弧槽抑制次级电子倍增的影响.该结构有望在高功率速调管中获得应用.
In this paper, the periodic semicircle groove disk is investigated to restrain the multipactor phenomenon in high power pill-box window. Through the theoretical analysis, the semicircle groove is proved to avoid the local field enhance-ment, which always exists in the vicinity of the sharp boundary groove. The proper groove width with a corresponding minimal suppression tangential electric field is achieved by simulating the multipactor procedure with Monte-Carlo al-gorithm. The effect of normal electric field is also analyzed. This configuration is to be applied to the high power klystron.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2014年第22期353-359,共7页
Acta Physica Sinica
基金
国家重点基础研究发展计划(批准号:2013CB328901)资助的课题~~
关键词
盒形窗
半圆弧槽
次级电子倍增
蒙特卡罗模拟
pill-box window
semicircle groove
multipactor
Monte-Carlo simulation