基于SU-8/PMMA双层胶技术的硅点阵结构制作

Fabrication of silicon dot array using a bilayer of SU-8/PMMA stack

本文介绍了一种通过SU-8/PMMA双层胶制备硅点阵结构的方法,首先用PDMS模板压印带SU-8/PMMA双层胶的硅片,用ICP刻蚀后,得到具有内切结构的光刻胶掩膜,镀金属膜并去胶后,进行金属辅助化学湿法刻蚀,在硅片表面获得点阵结构。实验结果表明,通过该方法获得的硅点阵结构的反射率较平面硅有显著降低;该方法成本较低,过程简单,由于采用软压印和低压压印的方式,可实现硅点阵结构的大面积制备。

In this paper we present a new technique to fabricate silicon dot array using a bilayer of SU-8/PMMA stack. Firstly, a silicon substrate coated by SU-8/PMMA bilayer was imprinted by PDMS template, then an ICP etching process was carried out to obtain mask with undercut structures, next, a metal film was deposited onto the structure followed by a lift-off process to remove the mask. After that,metal-assisted chemical wet etching was used to etch the substrate and then a silicon dot array was obtained. Experimental results show that the reflectance of silicon substrate with array structures fabricated with this method is decreased significantly compared to planar silicon. This method is simple and low-cost ,for based on low pressure and soft imprinting theory it can be used to get a large area of silicon dot array.