摘要
Ce-doped Cu In Te2（CICT） semiconducting compounds are successfully synthesized. The phase structures, optical,and electric properties are investigated using powder X-ray diffraction（XRD）, field emission scanning electron microscopy（FESEM）, X-ray photoelectron spectrometer（XPS）, Raman spectrometer, ultraviolet and visible spectrophotometer（UVVis）, and a standard four-probe method. Cu In1-xCex Te2 crystallizes into a tetragonal structure with predominant orientation along the [112] direction. The lattice parameters are a = 6.190（6） A–6.193（0） A and c = 12.406（5） A–12.409（5） A. Ce prefers to occupy the 4b crystal position. According to the analysis of XPS spectra, Ce shows the mixture of valences 4＋and 3＋. Raman spectra reveal that the photon vibrating model in the CICT follows A1 mode in a wavenumber range of123 cm^-1–128 cm^-1. UV-Vis spectra show that the band gap Eg values before and after 0.1 mole Ce doped into Cu In Te2 are 1.28 e V and 1.16 e V, respectively. It might be due to the mixture of valences for Ce. Ce doped into Cu In Te2 still shows the semiconductor characteristics.
Ce-doped Cu In Te2（CICT） semiconducting compounds are successfully synthesized. The phase structures, optical,and electric properties are investigated using powder X-ray diffraction（XRD）, field emission scanning electron microscopy（FESEM）, X-ray photoelectron spectrometer（XPS）, Raman spectrometer, ultraviolet and visible spectrophotometer（UVVis）, and a standard four-probe method. Cu In1-xCex Te2 crystallizes into a tetragonal structure with predominant orientation along the [112] direction. The lattice parameters are a = 6.190（6） A–6.193（0） A and c = 12.406（5） A–12.409（5） A. Ce prefers to occupy the 4b crystal position. According to the analysis of XPS spectra, Ce shows the mixture of valences 4＋and 3＋. Raman spectra reveal that the photon vibrating model in the CICT follows A1 mode in a wavenumber range of123 cm^-1–128 cm^-1. UV-Vis spectra show that the band gap Eg values before and after 0.1 mole Ce doped into Cu In Te2 are 1.28 e V and 1.16 e V, respectively. It might be due to the mixture of valences for Ce. Ce doped into Cu In Te2 still shows the semiconductor characteristics.
基金
Project supported by the National Natural Science Foundation of China(Grant No.11274110)
