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On the MOSFET-Based Temperature Sensitive Element for Bolometer Application

On the MOSFET-Based Temperature Sensitive Element for Bolometer Application
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出处 《Journal of Earth Science and Engineering》 2014年第8期464-469,共6页 地球科学与工程(英文版)
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参考文献7

  • 1Moreno, M., Torres, A., Ambrosio, R., and Kosarev, A. 2012. Un-cooled Microbolometers with Amorphous Germanium-Silicon (a-GexSiy: H) Thermo-Sensing Films.
  • 2Vedel, C., Martin, J. L., Ouvrier Buffet, J. L., Tissot, J. L., Vilain, M., and Yon, J. J. 1999. "Amorphous Silicon Based Uncooled Microbolometer IRFPA". In Proceedings SPIE 3698, Infrared "Technology and Applications XXV, 276.
  • 3Lapadatu, A., Kittisland, G., Elfving, A., Hohler, E., Kvisteroy, T., Bakke, T., and Ericsson, P. 2010. "High-Performance Long Wave Infrared Bolometer Fabricated by Wafer Bonding." In Proceedings SPIE 7660, Infrared Technology and Applications XPLYVI, 766016.
  • 4Forsberg, F. 2013. "VLSHI (Very Large Scale Heterogeneous Integration) and Wafer-Level Vacuum Packaging for Infrared Bolometer Focal Plane Arrays." Infrared Physics & Technology 60:251-9.
  • 5Kropelnicki, P., and Vogt, H. 2010. "A New DC-Temperature Model for a Diode Bolometer Based on SOI-Pin-Diode Test Structures." In 2010 XIth International Workshop on Symbolic and NumericalMethods, Modeling and Applications to Circuit Design 1-4.
  • 6Takamuro, D., Maegawa, T., Sugino, T., Kosasayama, Y., Ohnakado, T., Hata, H., Ueno, M., Fukumoto, H., Ishida, K., Katayama, H., Imai, T., and Ueno, M. 2011. "Development of New SOl Diode Structure for beyond 17 ~tm Pixel Pitch SOI Diode Uncooled IRFPAs". InProceedings SPIE 8012, Infrared Technology and Applications XXXVII, 80121E.
  • 7Socher, E., Beer, S. M., and Nemirovsky, Y. 2005. "Temperature Sensitivity of SOI-CMOS Transistors for Use in Uncooled Thermal Sensing." IEEE Transactions on Electron Devices 52 (12): 2784-90.

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