InGaAsSb/GaSb量子阱能带结构及自发发射谱

Band structure and spontaneous emission spectrum of InGaAsSb/GaSb quantum well

讨论了不同In组分对InGaAsSb/GaSb量子阱能带结构,即带隙及带边不连续性(带阶)的影响。给出了较为精准的InGaAsSb禁带宽度与In组分的关系。分析了In组分对InGaAsSb/GaSb导带、价带带阶的作用。研究表明,随In组分的增加,InGaAsSb禁带宽度减小,应力加大,能带漂移增大,InGaAsSb/GaSb导带、价带的带阶减小。同时,利用上述研究结果合理地解释了InGaAsSb/GaSb自发发射谱的增益、发射峰位及半峰宽与In组分关系。研究In组分对InGaAsSb/GaSb量子阱能带结构及自发发射谱的影响,可以定性地解释已有的实验报道。

This paper presents a theoretical study of influence of In content on the InGaAsSb/GaSb quantum well structure.The accurate relationship between the band gap and the In content is given.The band offset as functions of the In content is calculated numerically.The results show that as the In content increase,the band gap of InGaAsSb decreases accordingly,but the amount of stress enhances,the band edge shift gets larger,and the band offset of InGaAsSb/GaSb reduces.Meanwhile,The peak wavelength of spontaneous emission spectra exhibits redshift and the gain decreases with the increase of the In content.This proves that it is feasible to adjust and control the band gap by altering the In content,which is useful for tailoring the material property and the photonics device design.