n-型有机半导体插入层提高p-型并五苯薄膜晶体管性能(英文)

Improved Performance of p-type Pentacene Thin Film Transistor by Inserting Thin Interlayer of n-type Organic Semiconductor

在金电极和p-型并五苯有源层之间插入n-型有机半导体层显著提高了并五苯薄膜场效应晶体管的性能。在插入2nm厚的N,N-bis（2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-pentadecafluorooctyl）-1,4,5,8-naphthalenetetracarboxylicdiimide（NTCDI-C8F）和N,N′-dioctyl-3,4,9,10-perylenedicarboximide（PTCDI-C8）层后,器件的阈值电压由-19.4V显著降低到-1.8和-8.7V、迁移率提高了约2倍、电流开关比保持在10^5~10^6。这为通过简单地在电极和有机半导体有源层之间引入其他有机半导体薄层的方法来构建具有低阈值电压和高迁移率特征的有机薄膜场效应晶体管器件提供思路。

The significantly improved performance of pentacene-based organic thin film transistors（OTFTs） is achieved by introducing thin n-type organic semiconductor interlayers of N,N-bis（2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-pentadecafluorooctyl）-1,4,5,8-naphthalenetetracarboxylic diimide（NTCDI-C8F） and N,N′-dioctyl-3,4,9,10-perylenedicarboximide（PTCDI-C8） between Au source/drain electrodes and the p-type pentacene active layer. By introducing 2 nm thickness of NTCDI-C8 F or PTCDI-C8 layer, the threshold voltage of the OTFT devices is remarkably reduced from-19.4 to-1.8 and-8.7 V, respectively, and the mobility is enhanced about 2 times,while the on/off current ratio keeps at a level of 10^5~10^6. The results suggest a convenient way to achieve lowthreshold-voltage pentacene-based organic thin film transistors with high mobility.