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AZO-SiO_2-Si材料中二维侧向光伏效应的研究 被引量:2

Two Dimensional Lateral Photovoltaic Effect of AZO-SiO_2-Si Materials
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摘要 采用旋转涂覆法在被氧化的硅基底片上形成掺铝氧化锌(AZO)薄膜,再经过真空烘干后制成AZO-Si O2-Si金属氧化物-氧化物-半导体材料样品。使用波长785 nm、功率5 m W的激光在二维方向上扫描样品,绘制出侧向光伏与激光照射点的关系曲线图,研究其二维侧向光伏效应。激光沿一定轨迹扫描金属氧化物-氧化物-半导体结构样品后,利用Origin软件将测得的实验数据拟合成实验结果图。为了更深层次的研究AZO-Si O2-Si结构中的侧向光伏效应,根据电子跃迁、载流子扩散和能带结构理论,结合前人的研究成果建立物理模型。研究显示,作为一种新型的高精度传感器,样品电极点连线区间内测得的侧向光伏曲线灵敏度为90.35 m V·mm-1、线性相关系数为0.9987,因而AZO-Si O2-Si结构可以用作高精度位移传感器(PSD)。实验结果显示激光扫描线偏离电极连线时,线性相关系数和灵敏度都会减小。在垂直于电极连线方向上,虽然侧向光伏曲线没有良好的线性相关性和较高的灵敏度,却具有高度的对称性,AZO-Si O2-Si结构可以用作距离校准传感器(RCD)。 An AZO( Al-doped Zn O) film was formed on oxidized silicon substrate by the method of spin coating,and a sample with AZO-Si O2-Si metal oxide-oxide-semiconductor material was fabricated after the film was vacuum dried. To investigate the two dimensional lateral photovoltaic effect,the sample was scanned by 780 nm and 5 m W laser in two dimensional orthogonal directions,and curves of the two-dimensional lateral photovoltaic( LPV) were plotted. Data modeling by Origin displayed experimental results in pictures after the laser scanning was done. For the further study of the LPV in AZO-Si O2-Si structure,the physical model on the base of electron transition,carrier diffusion and energy band structure theory was proposed. The results indicated that linear correlation coefficient and sensitivity of the lateral photovoltaic curve between the two electrodes were 0. 9987 and 90. 35 m V·mm^- 1,respectively,so the structure had a great prospect as position sensitive detector( PSD). As a novel high sensitivity detector,it was found that the linear correlation coefficient and sensitivity decreased while the laser scanning tracks deviated from the line connecting the two electrodes. In addition,in spite that the linear correlation coefficient and sensitivity were low in the direction that was perpendicular to the line connecting the two electrodes,the lateral photovoltaic curves were significantly symmetrical,so the structure could also be used as range calibration detector( RCD).
出处 《稀有金属》 EI CAS CSCD 北大核心 2014年第6期1080-1085,共6页 Chinese Journal of Rare Metals
基金 国家自然科学基金项目(11247311) 2011年上海高校青年教师培养资助计划项目(shgcs029)资助
关键词 AZO-SiO2-Si材料 高精度传感器 金属氧化物-氧化物-半导体结构 二维侧向光伏效应 AZO-SiO2-Si material high sensitivity detector metal oxide-oxide-semiconductor structure two dimensional lateral photovoltaic effect
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参考文献18

  • 1Xiao S Q, Wang H, Zhao Z C, Gu Y Z, Xia Y X. The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures [ J ]. Opt. Express, 2008, 16(6): 3798.
  • 2Du L. , Wang H.. Infrared laser induced lateral photo- voltaic effect observed in Cu2O nanoscale film [ J ]. Op- tics Express, 2010, 18(9) : 9113.
  • 3孙小庆,魏峰,杨志民,陈秋云,陈军.高真空脉冲激光沉积CeO_2(111)/Si(111)薄膜的结构与形貌研究[J].稀有金属,2013,37(3):389-395. 被引量:8
  • 4Jeong I S, Kim J H, Im S. Ultraviolet-enhanced photo- diode employing n-ZnO/p-Si structure [ J ]. Appl. Phys. Lett. , 2003, 83(14): 2946.
  • 5Yu C Q, Wang H, Xia Y X. Giant lateral photovohaic effect observed in Ti02 dusted metal-semiconductor struc- ture of Ti/TiO2/Si [ J ]. Appl. Phys. Lett. , 2009, 95 (14) : 3506.
  • 6Xu J Q, Pan Q Y, Shun Y A, Tian Z Z. Grain size control and gas sensing properties of ZnO gas sensor [J]. Sens. Actuators B Chem. , 2000, 66(1-3): 277.
  • 7Van de Walle C G. Hydrogen as a cause of doping in zinc oxide [J]. Phys. Rev. Lett., 2000, 85(5): 1012.
  • 8Chtm B S, Wu H C, Abid M. The effect of deposition power on the electrical properties of M-doped zinc oxide thin films [J]. Appl. Phys. Lett., 2010, 97(8) : 082109.
  • 9Lu J, Wang H. Large lateral photovoltaic effect ob- served in nano Al-doped ZnO films [ J ]. Optics Ex- press, 2011, 19(15) : 13806.
  • 10Jin K J, Zhao H B, Lu H B, Liao L. Dember effect induced photovoltage in perovskite p-n Heterojunctions [J]. Appl. Phys. Lett., 2007, 91(8): 081906.

二级参考文献41

  • 1孙晖,张琦锋,吴锦雷.基于氧化锌纳米线的紫外发光二极管[J].物理学报,2007,56(6):3479-3482. 被引量:15
  • 2Ahsanulhaq Q, Umar A, Hahn Y B 2007 Nanotechnology 18 115603.
  • 3Shen G Z, Chen P C, Ryu K M, Zhou C W 2009 J. Mater. Chem. 19 828.
  • 4Song J H, Wang X D, Riedo E, Wang Z L 2005 J. Phys. Chem. B 109 9869.
  • 5Umar A, Karunagaran B, Suh E K, Hahn Y B 2006 Nanotechnol- ogy 17 4072.
  • 6Liu J Z, Ahn Y H, Park J Y, Koh K H, Lee S 2009 Nanotechnology 20 5203.
  • 7Djurii6 A B, Ng A M C, Chen X Y 2010 Prog. Quant. Electron. 34 191.
  • 8Djudgi6 A B, Leung Y H 2006 Small 2 944.
  • 9Zhang G B, Shi C S, Hart Z E Shi J Y, Fu Z X, Kirm M, Zimmerer G 2001 Chin. Phys. Lett. 18 441.
  • 10Dai L, Chen X L, Wang W J, Zhou T, Hu B Q 2003 J. Phys. Con- dens. Matter 15 2221 1671.

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