InGaN/GaN多量子阱太阳电池的光电性能研究

The research on optoelectronic performance of InGaN / GaN multiple quantum wells solar cells

对利用In含量为0.3的In Ga N/Ga N多量子阱制作的In Ga N太阳电池的结构和光电性能进行了研究,该太阳电池的In Ga N/Ga N多量子阱结构在一定程度上减轻了In N和Ga N相分离现象.研究结果显示,In Ga N/Ga N多量子阱结构的太阳电池,在单色光波长大于420 nm的工作条件下的光电性能有明显的改善.利用In Ga N/Ga N多量子阱结构制作的In Ga N太阳电池,其开路电压约为2.0 V,填充因子约为60%,在波长420 nm时,外量子效率为40%,但在波长450 nm时,却只有10%.

The structure and optoelectronic performance of InGaN solar cells are researched by preparing In -GaN/GaN multiple quantum wells with In contents exceeding 0.3 , attempting to alleviate to the phase separa-tion phenomenon of InN and GaN at a certain degree by this InGaN/GaN multiple quantum wells structure .The research result is that this InGaN/GaN multiple quantum wells solar cells have a better optoelectronic perform-ance at wavelengths longer than 420 nm.The prepared solar cells based on InGaN/GaN multiple quantum wells exhibit an open circuit voltage of about 2 V, fill factor of about 60%, and an external efficiency of about 40%at 420 nm, but only about 10%at 450 nm.