消除射频功率放大器记忆效应的仿真研究

Research of Simulation to Cancel the Memory Effect for RF Power Amplifier

为了减小射频功率放大器的记忆效应,进一步提高功率放大器的线性度,采用漏极静态偏置电阻优化的方法消除电记忆效应,并利用PN结温度升高使导通电压下降的特性进行温度补偿以抵消电热记忆效应.高级电子设计系统(Advanced Design System,ADS)仿真结果表明,放大器三阶互调的高低频谱分量的差值从6.88 d B降低到0.214 d B,显著地消除了电记忆效应,同时也在一定程度上改善了电热记忆效应.

In order to decrease the memory effect and to increase the linearity of RF （radio frequency） PA （power amplifier） , the optimization method was adopted by adjusting drain static bias resistor to eliminate electric memory effect. Offsetting the electro-thermal memory effect was also achieved by temperature compensation due to the feature that the increase of PN function＇s temperature would drop the conduct voltage. ADS simulation result showed that the difference between the high and low frequency component of third-order intermodulation was decreased from 6. 88 dB to 0. 214 dB and the electric memory effect was significantly eliminated. Meanwhile, the electro-thermal memory effect was also improved.