应用于安全芯片的一种低功耗高精度基准源

A low power and high precision reference source applied in safety chip

利用亚阈值CMOS管的Ⅰ-Ⅴ指数工作特性,对三级管VBE电压的负温度系数进行补偿,实现了一种针对安全芯片应用需求的新型基准源.该基准源核心结构是使用亚阈值CMOS管搭建缓冲运放,实现6级温度补偿,输出1V基准电压.所提出的基准源使用SMIC 180 nm工艺实现,并通过Spectre仿真验证：全温区-40℃～125℃内,基准电压变化范围小于1 mV;该基准源典型功耗4.5 μA;对低功耗高精度基准源的研究具有很强的实用性和指导意义.

Using the exponential Ⅰ-Ⅴ characteristic of the subthreshold CMOS to realize the audion VBE＇s negative temperature coefficient compensation,this paper presents a reference source structure for safety chip application,employing the subthreshold CMOS to construct buffer OPA,achieving six stages positive temperature compensation,outputting 1 V reference voltage.This reference source circuit is implemented by SMIC 180 nm and passes the Spectre simulation verification,whose output reference voltage varies less than 1 mV accompanying with temperature variation in the whole temperature range-40 ℃～125 ℃.This reference source＇s power is 4.5 μA,which provides strong practicability and guidance meaning to low power and high precision reference source research.