量子阱红外探测器衬底完全去除技术研究

Study on complete elimination of substrate of quantum well infrared photodetector

背面减薄技术对于提高量子阱红外焦平面探测器的性能有着重要的意义,通过衬底减薄能够缓解探测器芯片与读出电路的热膨胀失配,提高互连混成芯片可靠性,同时能够有效降低串扰。本文结合机械研磨、化学机械抛光和选择性湿法腐蚀技术,实现了量子阱探测器互连混成芯片的衬底完全去除。

Substrate thinning technology has a great significance for raising performance of quantum well infrared de- tector （QWIP）. Through substrate thinning, thermal expansion mismatch between detector chip and ROIC is de- creased,which improves the reliability of chip and reduces the crosstalk. Combined with mechanical polishing,chemi- cal mechanical polishing and selective wet etching, complete elimination of QWIP substrate is accomplished.