Cu/Ti_3SiC_2体系润湿性及润湿过程的研究

Wettability and Wetting Process in Cu/Ti_3SiC_2 System

采用座滴法研究了温度及Ti3SiC2的两个组成元素Si和Ti对Cu/Ti3SiC2体系润湿性的影响。结果表明,Cu与Ti3SiC2之间有良好的润湿性,且润湿过程属于反应性润湿。随着温度的升高,Cu与Ti3SiC2间的反应区扩大,反应层深度增加,润湿角减小,温度超过1250℃后反应明显加快,至1270℃时润湿角降至15.1°。物相分析与微观结构研究表明,Cu/Ti3SiC2界面区域发生了化学反应,反应产物主要为Ti Cx和CuxSiy,同时发生元素的互扩散,形成反应中间层,改变体系的界面结构,促进了Cu和Ti3SiC2基体的界面结合,从而改善了体系的润湿性。在Cu中添加Si抑制了Ti3SiC2的分解,而添加Ti阻碍了Cu向Ti3SiC2的渗入,均不利于Cu/Ti3SiC2体系润湿性的改善。

Effects of wetting temperature and Ti3SiC2 constituent elements Si and Ti on the wettability of Cu/Ti3SiC2 system were investigated in vacuum via sessile drop technique. The results show that the wettability of Cu/Ti3SiC2 system is fairly well at elevated temperature because of the reaction between Cu and Ti3SiC2. The reaction zone in Cu/Ti3SiC2 interface becomes larger and deeper with the temperature increasing, and which leads to the decrease in contact angle. Its reaction rate is accelerated when the temperature exceeds 1250℃. The minimum con- tact angle of 15.1° is measured at 1270℃. XRD and SEM results indicate that the reaction products are TiCx and CuxSiy, and the reaction layer is mainly consisted of Cu, Ti3SiC2, TiCx and CuxSiy depending on the wetting tem- perature. The wettability of Cu/Ti3SiC2 system is improved by the reaction layer. Adding alloying element Si or Ti to Cu is harmful to the wettability between Cu and Ti3SiC/since Si inhibits the decomposition of Ti3SiC2 and Ti hinders the infiltration of Cu into Ti3SiC2.