摘要
There has been increasing interest, both exper- imentally and theoretically, in the investigation of low-dimensional semiconductor heterostructures due to their intrinsic physical properties and technological applications in electronic and optoelectronic devices. The studies on quantum heterostructures have opened a new field in fundamental physics, and also offer a wide range of potential applications for optoelectronic devices. By varying the profile of a semiconductor quantum well （QW）, both the subband state energies and their wave functions change, and so do various physical properties depending on them.
There has been increasing interest, both exper- imentally and theoretically, in the investigation of low-dimensional semiconductor heterostructures due to their intrinsic physical properties and technological applications in electronic and optoelectronic devices. The studies on quantum heterostructures have opened a new field in fundamental physics, and also offer a wide range of potential applications for optoelectronic devices. By varying the profile of a semiconductor quantum well （QW）, both the subband state energies and their wave functions change, and so do various physical properties depending on them.
