摘要
One-dimensional Ⅲ- Ⅴ semiconductor nanostruc- tures show fascinating applications in various fields. These materials have high electron mobil- ity, superior optical properties, and great flexibility in heterostructure design. When applied in ad- vanced nanodevices, the performance is highly de- pendent on the morphology and crystal structure of the nanostructures. Therefore, the full understand- ing and control of crystal structures and morpholo- gies are of importance to develop such applications. As a typical Ⅲ-Ⅴ semiconductor, InP is an especially attractive target for nanowires research due to its extensive uses in various fields. InP nanostructures with different morphologies, such as quantum dots, nanospheres, nanowires, and nanotubes, have been successfully synthesized. However, the facile syn- thesis of InP semiconductor with comb-like morpholo- gies have rarely been reported.
One-dimensional Ⅲ- Ⅴ semiconductor nanostruc- tures show fascinating applications in various fields. These materials have high electron mobil- ity, superior optical properties, and great flexibility in heterostructure design. When applied in ad- vanced nanodevices, the performance is highly de- pendent on the morphology and crystal structure of the nanostructures. Therefore, the full understand- ing and control of crystal structures and morpholo- gies are of importance to develop such applications. As a typical Ⅲ-Ⅴ semiconductor, InP is an especially attractive target for nanowires research due to its extensive uses in various fields. InP nanostructures with different morphologies, such as quantum dots, nanospheres, nanowires, and nanotubes, have been successfully synthesized. However, the facile syn- thesis of InP semiconductor with comb-like morpholo- gies have rarely been reported.
基金
Supported by the National Natural Science Foundation of China under Grant Nos 21071122, 21371149 and 21101134, and the Natural Science Foundation of Hebei Province under Grant Nos E2010001169, ZD2010112, and 14961107D.
