SiC功率器件离子注入和退火设备及工艺验证

Ion Implantion and Annealing Equipment for SiC Power Device and the Process Certification

针对SiC功率器件工艺制程中离子注入和激活退火的技术难题，利用爱发科公司自行设计并开发的高温离子注入设备（ULVAC，IH-860DSIC）、碳膜溅射设备（ULVAC，SME-200）和高温激活退火设备（ULVAC，PFS-6000-25）。通过计算模拟、AFM对比结果、Hall电阻测定和RHEED图像分析等表征手段，研究了高温高能多步注入、碳膜覆盖技术和退火温度分别对SiC器件的物理特性、表面特性及电学特性的影响。结果表明，采用500℃A1离子注入浓度为5×10^18cm^-3、20nm厚碳膜溅射技术和1700～2000℃激活退火技术，能够实现具有良好表面特性和电学特性的P型SiC掺杂工艺。设备的稳定性已在多条SiC生产线上用于制造SiC—SBD器件和SiC．MOSFET器件完成工艺验证。

According to the technical problem of ion implantion and activation annealing process in SiC power devices, high-temperature ion implantion equipment （ULVAC, IH-860DSIC） , carbon sputter equipment （ULVAC, SME-200） and high-temperature activation annealing equipment （ULVAC, PFS- 6000-25） designed and developed by ULVAC company were adopted. By virtue of computer simulation, AFM comparison results, Hall resistance test and RHEED pattern analysis, the influences of the implan- tion with high-temperature high-energy multi-step, carbon-cap technology and annealing temperature on the physical characteristic, surface characteristic and electrical characteristic were respectively investiga- ted. The result shows that using the A1 ion implantion concentration of 5xlOlScm-3 at 500 ~C , the 20 nm thickness of carbon sputtering technology and activation annealing technology with the temperature of 1 700-2 000 ~C, p-type SiC dopant process with excellent surface characteristic and electrical characteris- tic can be achieved. The stability of the equipment has been confirmed from the manufacturer to fabricate the SiC-SBD device and SiC-MOSFET device in many SiC production lines for process certification.