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CMP透明膜厚测量设备发展历程

The Develop History of Metrology for the Transparent Film Pre and Post CMP
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摘要 论述了反射光谱学及椭圆偏振法的原理,根据这些原理分析了离线测量设备,并列举了具有代表性的设备Nanospec6100和KLA-TENCOR的ASET-F5X,指出离线设备的特点及其局限性;分析了集成测量平台的特点,相比于离线测量,集成测量平台可获得较高的片间非均匀性.但会造成前5~7片的浪费,列举代表性集成平台NovaScan 2040,并分析其具体的技术特点:分析了在线传感器终点检测的优越性,其具有控制薄膜形貌及终点检测的功能,结合先进过程控制,可以达到极高的平整度;结合以上分析,指出今后CMP设备的发展方向。 the paper detailed overview the principle of the spectroscopic reflectometry spectrum and the spectroscopic ellipscometry. To analyze the off-line standalone equipment according to the aboved mentioned principle, and list some representative metrology tools such as NanoSpec 6100 and KLA-TENCOR ASET-F5X, figuring out the advantage and shortage of off-line standalone metrology; figuring out the highlight of the integrated metrology platform, to compare with the off-line standalone metrology platform, the integrated metrology can get more better wafer to wafer non-uniformity, but will lead to the 5-7th wafers waste at the start, the paper list the NovaScan 2040 as the example, and give its specification; To analyze the extraordinaire perfect of the in-situ sensor metrology, pointing out it can control the film profile and have end point detection function, combining with the advanced process control, it can reach extreme planarity of the film surface. At the last, the paper give the develop trend of the CMP tool in the future.
出处 《电子工业专用设备》 2014年第2期1-5,共5页 Equipment for Electronic Products Manufacturing
关键词 化学机械平坦化 光学干涉法 椭圆偏振法 离线检测 集成测量平台 在线传感器测量 Chemical mechanical planarization (CMP) Spectroscopic reflectometry Spectroscopic ellipscometry Off-line standalone metrology Integrated metrology In-situ sensor metrology
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参考文献3

  • 1MichalQuirk,JulianSerda,著.半导体制造技术[M].韩郯生译.北京:电子工业出版社,2009:477-505.
  • 2马逊,刘祖明,陈庭金,廖华.椭圆偏振仪测量薄膜厚度和折射率[J].云南师范大学学报(自然科学版),2005,25(4):24-27. 被引量:10
  • 3R. M. A. 阿查姆, N. M. 巴夏拉. 椭圆偏振测量术和偏振光[M]. 梁民基,尹树百,张福初 等译. 北京: 科学出版社, 1986. 40-94

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