摘要
改进CG6000型单晶炉的热场,增加下保温碳毡和上保温罩,改一段式导流筒为三段式导流筒。通过CGsim模拟软件的晶体生长模拟,对比了改进前与改进后的热场,模拟分析指出改进后热场加热功率降低,熔体温场改善,晶体﹑熔体轴向的温度梯度均升高,拉晶速率提升。通过单晶生长实验,验证了热场功率的降低和等径拉速的提高,改善在等径生长的后期更为明显。
This paper improves the thermal field in CG6000-type Czochralski crystal furnace, adding the bottom insulation carbon felt and the top insulation cover, changing the one section guide shell to the three sections guide shell. According to Growth simulation by CGsim simulation software, the previous thermal field is compared to the improved thermal field. Simulation analysis indicates heating power is reduced, the melt temperature field is improved, melt's axial temperature gradient and crystal's axial temperature gradient are increased, and pulling rate is increased. The single crystal growth experiment verified the thermal field power reduction and pulling rate increasing, and these improvements is more effective in the late diameter growth.
出处
《电子工业专用设备》
2014年第8期20-24,共5页
Equipment for Electronic Products Manufacturing
基金
天津市青年基金项目(12JCQNJC01700):低缺陷
高均匀性直拉硅热场和工艺优化模拟的研究
关键词
直拉单晶炉改造
三段式导流筒
保温碳毡
保温罩
数值模拟
Czochralski crystal furnace improvement
Three sections heat shield
Insulation carbon
Insulation cover
Numerical simulation