摘要
描述了CCD光刻过程中出现的常见缺陷及其分类。对光刻过程中缺陷产生的原因进行了分析,找出工艺设置和工艺操作过程中容易出现的问题;并针对各类缺陷,提出了相应的解决措施,以达到消除缺陷的目的,使工艺能力得到提升。
Common defects in the lithography process of Charge Coupled Devices（CCD）were analyzed and classified accordingly.Based on analyzing the causes of the defects,the problems frequently encountered in process and operations were presented.And relevant solutions were provided for different defects.
出处
《半导体光电》
CAS
CSCD
北大核心
2014年第4期647-649,共3页
Semiconductor Optoelectronics
关键词
CCD
光刻
图形
缺陷
CCD
lithography
pattern
defect
