金刚石线锯切割多晶硅片的气相制绒研究

Vapor Etching Method for Diamond Wire Sawn Multicrystalline Silicon Wafers

采用气相制绒方法对金刚石切割多晶硅片进行表面制绒.2g硅加到HF-HNO3-H2O(400mL,体积比为6:3:1)的酸混合溶液中在室温下反应产生气相,利用气相对金刚石切割多晶硅片表面进行制绒研究.制绒4min时,硅片表面的切割纹被完全去除、大坑套小坑的蜂窝状蚀坑密布硅片表面,减反效果显著,反射率低至19.51%.气相制绒后的金刚石切割多晶硅片表面的微观粗糙度比传统酸混合溶液制绒后的高约20%.

Vapor etching was used to etch diamond wire sawn multicrystalline silicon wafers.The vapor was produced from 2g silicon wafer adding into HF-HNO3-H2 O acid mixture solution（400mL,in the volume ratio of 6：3：1）to reaction at room temperature.Diamond wire sawn multicrystalline silicon wafers were etched in vapor.Etching for 4min,saw marks can be removed and honeycomb etched pits were densely covered with silicon wafer surface.The reflectivity of silicon wafer decreases remarkablely by using the vapor etching methods.The reflectivity of the silicon wafers by vapor etching is low to19.51%.The micro-roughness of diamond wire sawn mulicrystalline silicon wafers etched with vapor method is actually about 20% higher than that of etching with traditional acid mixture solution method.