期刊文献+

高取向富锂正极材料的合成及电化学性能

Synthesis and Electrochemical Performance of Highly Oriented Li-Rich Cathode Material
下载PDF
导出
摘要 以六亚甲基四胺(HMT)为导向剂,通过水热法,在不同温度下合成了六边形薄片状的高取向三元前驱体NixCoyMn1-x-y(OH)2,采用氯化钾与氯化钠的混合熔盐法对前驱体进行煅烧后得到高取向富锂正极材料。经X射线衍射、扫描电镜等表征,材料具有良好的层状结构,在(003)晶面具有很高的择优取向。电化学测试结果表明,在0.1 C倍率下(20 m A/g),材料的首次放电容量为282.5 m A·h/g;1 C倍率下经30次循环放电容量从195.7 m A·h/g降至178.8 m A·h/g,容量保持率为91.4%;当倍率分别为2 C和5 C时,材料的放电容量分别为150.6 m A·h/g和110.0 m A·h/g。材料具有良好的循环稳定性和倍率性能。 The high-oriented ternary precursors NixCoyMn1-x-y (OH)2 with a hexagonal morphology have been obtained via a hydrothermal method by using hexamethylenetetramine (HMT) as directing agent at different temperature. A NaCl/KCl molten salt method was used to calcine the highly oriented Li-rieh cathode material. The results of XRD and SEM show that the obtained Li-rieh material has a highly (003) orientation and good layer structure. The initial discharge capacity of the material is 282. 5 mA · h/g at rate 0. 1 C;when the rate changes to 1 C,the discharge capacity declines to 178. 8 mA · h/g from 195.7 mA · h/g after 30 cycles. When the rate changes to 2 C and 5 C, the discharge capacity respectively is 150. 6 mA · h/g and 110.0 mA ·h/g. The materials have good cycle stability and rate performance.
作者 王皓 夏定国
出处 《精细化工》 EI CAS CSCD 北大核心 2014年第12期1422-1426,共5页 Fine Chemicals
基金 国家自然科学基金(11179001)~~
关键词 富锂正极材料 择优取向 水热法 电化学性能 功能材料 Li-rich cathode material preferred orientation hydrothermal method electrochemicalperformance functional materials
  • 相关文献

参考文献13

  • 1Wu Y, Manthiram A. Structural stability of chemically delithiated layered ( 1 - z) Li [ Li1/3 Mn2/3 ] 02-zLi [ Mn0.5 -r Ni0.5 -y C~2y ~ 02 solid solution cathodes [ J ]. J Power Sources, 2008,183 : 749 - 754.
  • 2Arunkumar T A, Wu Y, Manthiram A. Factors influencing the irreversible oxygen loss and reversible capacity in layered Li[ Li1/3Mn2/3 ] O2-Li [ M ] O2 ( M = Mno. 5 -y Ni0. 5 -r Co2y and NiI _y Coy ) solid solutions[ J]. Chem Mater,2007,19:3067 - 3073.
  • 3Jun Liu, B Reeja-Jayan, Arumugam Manthiram. Conductive surface modification with aluminum of high capacity layered Li [ Li0. 2 Mno. 54 Ni0. 13 Co0. 13 ] O2 cathodes [ J]. J Phys Chem C,2010, 114:9528 - 9533.
  • 4辜敏,杨防祖,黄令,姚士冰,周绍民.高择优取向铜镀层的电化学形成及其表面形貌[J].物理化学学报,2002,18(11):973-978. 被引量:47
  • 5门海泉,周灵平,肖汉宁.AlN薄膜择优取向生长机理及制备工艺[J].人工晶体学报,2005,34(6):1146-1153. 被引量:18
  • 6Guo Min, Diao Peng, Cai Shengmin. Hydrothermal growth of well- aligned ZnO nanorod arrays: dependence of morphology and alignment ordering upon preparing conditions[J]. J Solid State Chem,2005,178 : 1864 - 1873.
  • 7Xiao Xiaoling, Liu Xiangfeng, Wang Li, et al. LiCoO2 nanoplates with exposed (001) planes and high rate capability for lithium-ion batteries[ J]. Nano Res,2012,5 (6) :395 - 401.
  • 8Liu Zhaoping,Ma Renzhi,Osada Minoru,et al. Selective and controlled synthesis of a-and β-Cobalt hydroxides in highly developed hexagonal platelets [J]. J Am Chem Soc, 2005,127: 13869 - 13874.
  • 9Ni Shibing, Zhou Guo, Wang Xinghui, et al. Synthesis of Zn3 (OH)2V207 · nil2O hierarchical nanostructures and their photoluminescence properties [ J ]. Mater Chem Phys, 2010,120 : 426 -430.
  • 10Lu Zhonghua, Chen Zhaohui, Dahn J R. Lack of cation clustering in Li [ Nix Li1/3 - 2x/3 Mnz/3 - x/3 ] O2 ( 0 < x ≤ 1/2 ) and Li [CrxLi(1-x)/3 Mn(2-2x)/3 ] 02 (0 < x < 1 ) [J]. Chem Mater, 2003,15 : 3214 - 3220.

二级参考文献40

  • 1黄胜涛.固体X射线[M].北京:高等教育出版社,1985.214.
  • 2葛福云.博士学位论文[M].厦门:厦门大学,1991..
  • 3Enrique lborra, Marta Clement, Jesus Sangrador, et al. Effect of Particle Bombardment on the Orientation and the Residual Stress of Sputtered A1N films for SAW Devices [ J ]. IEEE Traasactioas on Ultrasonics, Ferroelectrics and Freqyency Control, 2004,51 ( 3 ) : 352 -358.
  • 4Six S, Gerlach J W, Rauschenbach B. Ion Beam Assisted Pulsed Laser Deposition of Epitaxial Aluminum Nitride Thin Films on Sapphire Substrates [ J ]. Surface and Coatings Technology, 2001,142-144:397-401.
  • 5Fan Z Y,Rong G,Browning J, et al. High Temperature Growth of A1N by Plasma-enhanced Molecular Beam Epitaxy[ J ]. Materials Science and Engineering, 1999, B67 : 80 -87.
  • 6Yumoto H ,Ishihara M, Kaneko T. Control of Perferential Orientation of A1N Thin Films Prepared by the Rective Sputtering Method[ J ]. J. Jpn. Assoc. Cryst. Growth, 1996,23:382-385.
  • 7Myung-Ho Lee, Jin- Phil Jung, Jin-Seok Lee , et al. Effects of Bottom Electrodes on the Orientation of A1N Films and the Frequency Responses of Resonators in A1N-based FBARs[ J]. Thin Solid Films, 2004,447-448:610-614.
  • 8Chu A K,Chao C H, Lee F Z, et al. Influences of Bias Voltage on the Crystallographic Orientation of A1N Thin Films Prepared by Long-distance Magnetron Sputtering [ J ]. Thin Solid Films, 2003,429 : 1-4.
  • 9Wang Bo , Wang Mei , Wang Ruzhi , et al. The Growth of A1N Film Composed of Silkworm-shape Grains and the Orientation Mechanism [ J ].Materials Letters ,2002,53:367- 370.
  • 10Brenner D,Anger H, Bustarret E, et al. Optical Constants of Epitaxial AlGaN Films and Their Temperature Dependence [ J ]. J. Appl. Phys. ,1997,82 : 5090 -5093.

共引文献63

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部