摘要
利用自制的抛光液对蓝宝石晶片进行化学机械抛光,研究化学机械抛光过程中抛光压力、抛光液pH值、SiO2浓度、络合剂种类及其浓度等参数对抛光速率的影响,采用MicroNano D-5A扫描探针显微镜观察抛光前后蓝宝石晶片的表面形貌。结果表明:在抛光条件为压力7psi、转速为50 r/min、抛光液流量为60 mL/min,抛光液组成为pH值12、SiO2浓度5%、络合剂Ⅰ及其浓度为1.25%时,得到最大抛光速率为35.30 nm/min,蓝宝石晶片表面质量较好,表面粗糙度Ra达到0.1 nm。
CMP （chemical mechanical polishing） experiments of sapphire substrates were carried out by using home-made slurry in order to study the effect of chelating agent on chemical mechanical polishing quality of sapphire. The comprehensive effects of the polishing down force, pH value, S{O2 concentration, the species and the concentration of chelating agent as well as particle concentration on the material removal rate （MRR） were investigated in detail. The surface of the polished sapphire was characterized by DSA-type multi-mode scanning probe microscope. The experimental results reveal that MRR can reach 35.3 nm/min and the surface roughness average （Ra） can reach 0.1 nm under the following CMP conditions： the down pressure force is 7 psi, polishing rotation speed is 50 r/min, polishing liquid is 60 mL/min; and ingredients of slurry： SiO2 concentration is 5% （mass fraction）, pH = 12.0, and chelating agent I concentration is 1.25% .
出处
《机械科学与技术》
CSCD
北大核心
2014年第7期1027-1030,共4页
Mechanical Science and Technology for Aerospace Engineering
基金
国家自然科学基金项目(50975002)
安徽工业大学创新团队项目(TD201204)
教育部高校留学回国人员科研项目资助
关键词
蓝宝石
化学机械抛光
抛光速率
络合剂
chelating agent
chemical mechanical polishing
removal rate
sapphire
substrates
surface roughness
