基于GaN LED芯片的反射电极结构在量产中的稳定性研究

Based on the Reflection Electrode Structure of GaN LED Chips in Quantity during Stability Studies

以GaN LED芯片量产制造中的一种主流金属电极结构(反射电极结构)为研究对象,主要从实际量产过程中如何保持该电极的稳定性方面着手研究。该研究详细阐述了如何实现和管控反射电极结构第1层膜厚的准确性,并指出了其对GaN LED芯片各项性能的影响;同时,还详细阐述了反射电极结构在量产过程中如何防范金属铝在后续作业和在存储过程中被慢慢腐蚀而导致电极结构不稳定的问题。

GaN LED chip production in the manufacture of a mainstream metal electrode structure（reflective electrode structure）for the study, mainly from the actual production process, how to maintain the stability of the electrode started studying. The study described in detail how to achieve the accuracy and control structure of the first reflective electrode layer thickness, and points out its impact on the performance of GaN LED chip; also elaborated on how reflective electrode structure in the production process prevention and aluminum in subsequent jobs in the stored procedure is slowly corrode and cause instability problems electrode structure.