摘要
利用化学气象沉淀法(CVD)在金属衬底上生长的石墨烯制备电子器件需要先把石墨烯转移到绝缘基底上,转移过程对器件制备的成功率和性能的均匀性有重要影响.转移过程中导致的石墨烯破损和金属生长基底残余颗粒污染受到普遍重视,然而由金属基底腐蚀液导致的石墨烯表面污染还没有引起足够的重视.本文利用拉曼光谱和X射线光电子能谱(XPS)证明了转移过程中金属基底腐蚀液会在石墨烯表面引入污染,利用我们发展的"改良的RCA(radio corporation of America)清洗(modified RCA clean)"转移工艺能够有效地去除这种污染.这对提高后续制备的电子器件的性能有重要意义.
Graphene grown by chemical-vapor deposition (CVD) on metal substrates has to be transferred onto an insulating substrate before it can be made into electronic devices. The transfer process affects the yield and performance uniformity of the devices, To improve the quality of transferred graphene, numerous researchers are focusing on how to reduce crack formation and metal particle residues resulting from the transfer process. However, surface contamination introduced by the metal-substrate etchants has not been paid enough attention. In this paper, using Rarnan and X-ray photoemission spectroscopy (XPS), we prove that metal etchants contaminate the graphene surface, and such contamination can be effectively removed by our developed “modified RCA clean” process. These results are important for improving the performance of the fabricated graphene devices.
出处
《科学通报》
EI
CAS
CSCD
北大核心
2014年第33期3322-3328,共7页
Chinese Science Bulletin
基金
国家重大科学研究计划(2011CB921904)
教育部科学技术研究项目(113003A)资助