电压和电极间距对BDD电极电化学氧化效率的影响

Effects of the Voltage and Electrode Space on the Electrochemical Oxidation Efficiency of the BDD Electrode

掺硼金刚石（BDD）薄膜电极具有很宽的电势窗口、很小的背景电流、很高的电化学稳定性、其电化学响应在很长时间内保持稳定以及耐腐蚀等优点。采用热丝化学气相沉积（HF—CvD）方法制备掺硼金刚石薄膜，并用金相显微镜、原子力显微镜（AFM）、X射线衍射（XRD）这三种测试方式进行表征。BDD薄膜电极在电解过程中消耗很多能量。从提高氧化效率来降低能耗的角度出发，研究了电压及电极间距对BDD薄膜电极电化学氧化效率的影响。通过实验得出电压在5～13V时电化学氧化效率会随着电压的升高而升高；电极间距在0．5～4cm时电化学氧化效率随着电极间距的增大而降低。

Boron-doped diamond （BDD） thin film electrode has a lot of advantages, such as wide potential window, small background current, high electrochemical stability, stable electrochemi- cal response in a long time and corrosion resistance. The BDD thin film was prepared by hot fila- ment chemical vapor deposition （HFCVD）, and characterized by the metallographic microscope, atomic force microscopy （AFM） and X-ray diffraction （XRD）. The BDD thin film electrode con- sumes a lot of energies in the electrolysis process. From the view of improving the oxidation effi- ciency and reducing energy consumption, the effects of the voltage and electrode space on the electrochemical oxidation efficiency of the BDD thin film electrode were investigated. The experi- ment results illustrate that the electrochemical oxidation efficiency increases with the increase of the voltage from 5 V to 13 V, and the electrochemical oxidation efficiency decreases with the in- crease of the electrode space from 0. 5 cm to 4 cm.