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石英钟罩对MPCVD金刚石膜沉积的影响 被引量:1

Effects of Quartz Bell Jar on Diamond Film Deposited by MPCVD
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摘要 为了提高高品质金刚石膜的沉积速率,利用CST三维电磁场仿真软件,模拟了Diamo Tek700微波等离子体化学气相沉积设备中,在忽略等离子体存在的前提条件下,石英钟罩的厚度和形状对沉积金刚石膜的基片表面电场分布的影响。同时采用壁厚3 mm,3.5 mm和4 mm的平顶和壁厚4 mm的圆顶钟罩分别进行了金刚石膜的沉积实验。模拟结果显示,对于同一类型的石英钟罩,壁厚的变化(3-4 mm)对基片表面平均电场影响不大;而壁厚相同的圆顶钟罩情况下基片表面平均电场则比平顶的高出10%。壁厚4 mm的圆顶石英钟罩得到了相对较高且均匀的电场分布。结果表明,沉积速率与模拟的基片表面电场强度存在对应关系;采用壁厚4 mm圆顶钟罩与原厂设计的壁厚3 mm平顶钟罩相比,在相同的工艺条件下,沉积速率提高一倍,达到1.4μm/h。 In order to improve the deposition rate of the quality of diamond film,the effects of geometric dimension and shape of the bell jar on electric field distribution at the substrate surface under the condition of without plasma have been studied by CST MWS software based on a Diamo Tek700 MPCVD system. The flat-top bell jars with wall thickness of 3 mm,3. 5 mm and 4 mm and the dome shaped bell jar of 4 mm thick wall were used to deposit diamond films. The results indicate that for the flat-top bell jar,the effect of the wall thickness on electric field distribution was not so large. However,mean electric field strength at substrate surface with the dome shaped bell jar was found to be 10% higher than that with the flat-top one. Experimental results show that deposition rate was well consistent with the mean electric field strength at substrate surface. Under the same growth process condition,the deposition rate with the dome shaped bell jar of 4 mm thick wall reached 1. 4 μm /h,which was doubled compared to those with the flat-top bell jar of 3 mm thick wall.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2014年第10期2586-2591,共6页 Journal of Synthetic Crystals
基金 国家重点基础研究发展计划(973)(2013CB933602)
关键词 微波等离子体化学气相沉积 金刚石 钟罩 沉积速率 MPCVD diamond bell jar deposition rate
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  • 1Thtmm M. Ml:'CVD-Diamtmd Windows fin" High-power and Long-pulse Millimeter Wave Transmission[ J ]. Diamond :nd Related Materitds,2001, 10(9-10) : 1692-1699.
  • 2Iteidinger R,Eamnlelaz G, Meier A, el al. CVD Diamond Windows Studied with l.ow and High Power Millimeter Waves[J]. IEEE Trtut.w:clicm cm Plsmt, Science ,2002,30( 3 } :800-8O6.
  • 3Zu S S, Yaran M K, Grot.jhn T A, e al. lnvestigatim of Diamond Deposition Uniimnity and Qualily for Freestanding Film and Substrate Applications [ J ]. Dittmoud and Related Materials ,2008,17S ( 3 ) :300-305.
  • 4丁明清,李莉莉,冯进军.无支撑优质金刚石膜研制中的相关问题探讨[J].真空科学与技术学报,2012,32(10):884-888. 被引量:2
  • 5于盛旺,安康,李晓静,申艳艳,宁来元,贺志勇,唐宾,唐伟忠.高功率MPCVD金刚石膜红外光学材料制备[J].红外与激光工程,2013,42(4):971-974. 被引量:2
  • 6丁明清,陈长青,白国栋,李含雁,冯进军,胡银富.无支撑、光学级MPCVD金刚石膜的研制[J].真空科学与技术学报,2011,31(6):661-665. 被引量:4
  • 7Ando Y, Yokota Y, Tachibana T. Large Area Deposition of < 100 > -textured Diamond Fihns by 60-kW Microwave Plasma CVD Reactor[ J]. Diamond and Rrelated Materials, 2002,11 (3-6) :596-600.
  • 8Hemawan K W, Grotjohn T A, Reinhard D K, et al. Improved Microwave Plasma Cavity Reactor for Diamond Synthesis at High-pressure and High Power Density [ J ]. Diamond and Related Materials, 2010,19 ( 12 ) : 1446 - 1452.
  • 9李莉莉,丁明清,白国栋,等.微波等离子体化学气相沉积金刚石输能窗片的研究[c].中国电子学会真空电子学分会第十八界学术年会论文集,2011,08:730-732.
  • 10Ding M Q, Li L L, Feng J J. A Study of High-quality Freestanding Diamond Films Grown by MPCVD [ J ]. Applied Surface Science,2012,258 : 5987-5991.

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