Sn、Tb复合掺杂钛酸钡陶瓷的制备及介电性能研究

Effects of Sn and Tb Co-doping on Structure and Dielectric Properties of BaTiO_3 Ceramics

采用传统固相法制备Sn、Tb复合掺杂BaTb0.01SnxTi0.99-xO3(x=0、0.05、0.10、0.15)陶瓷,借助X射线衍射、扫描电镜和阻抗分析仪研究Sn、Tb复合掺杂以及Sn掺杂量对钛酸钡陶瓷结构及介电性能的影响。结果表明,掺入SnO2后仍可保持单一钙钛矿结构,并且样品晶粒细化。当Sn掺杂量为10mol%,烧结温度为1350℃时,Sn、Tb复合掺杂BaTb0.01Sn0.1Ti0.89O3陶瓷居里峰移向低温,室温介电常数显著提高,可以达到9069,介电损耗仅为0.011。

BaTb0. 01SnxTi0. 99-xO3（ x =0,0.05,0.10,0.15） ceramics were prepared by conventional solidstate method. The effects of Sn-doping amount on microstructure and dielectric properties of the ceramic were investigated by X-ray diffraction,SEM and impedance analyzer. The results show that single-phase perovskite structure formed and the grain size reduced by doping SnO2. When the content of Sn was 10mol% and sintering temperature was 1350 ℃,the Curie point of BaTb0. 01Sn0. 1Ti0. 89O3 ceramic shifted to room temperature and the dielectric constant significantly increased. The dielectric constant of BaTb0. 01Sn0. 1Ti0. 89O3 ceramic reached 9069,and the dielectric loss was only 0. 011 at room temperature.