低温阳极键合工艺研究

Effect of silicon wafer surface treatment on anodic bonding at low temperature

对低温阳极键合特性进行了研究。通过对硅片进行亲水、疏水和表面未处理3种不同处理方式研究其对键合的影响,键合前将硅片浸入去离子水(DIW)中不同时间,研究硅表面H基和氧化硅分子数量对键合的影响。结果表明经亲水处理的硅片在水中浸泡1 h的键合效果最佳。并设计了不同烘烤时间下的阳极键合实验,表明在100°C下烘烤30 min可以有效减少气泡的数量和尺寸。由不同工艺条件下得到的键合形貌可知,通过控制硅片表面微观状态可以达到减小或消除键合气泡的目的。

The characteristics of anodic bonding at low temperature are researched. The effects onbonding for three different processing modes of silicon, including hydrophilic treatment, hydrophobictreatment and no surface treatment, are studied. The silicon wafers are dipped into Deionized Water（DIW）for different times to investigate the effect of the number of H-terminations and SiO2 molecules on siliconsurface for bonding. The results show that the best bond quality is achieved by dropping the silicon waferwith hydrophilic treatment in DIW for 1 h. Anodic bonding experiments at different drying time aredesigned. The bubble amount and size will decrease at 100 °C after drying for 30 min. According to theresults of bonding morphology obtained by different processing conditions, the bubbles can be minimizedor eliminated through controlling the microscopic state on silicon surface.