摘要
研究了闪存电路系统中高压电路的总剂量辐射效应(TID)。通过对内部高压电荷泵电路和高压负载电路的TID辐射效应测试研究,表明辐照后高压通路相关的存储阵列及高压晶体管漏电将造成电荷泵电路的负载电流过载失效,最终导致闪存电路编程或擦除操作失效。
The TID radiation degradation of high - vokage circuits in the flash memory circuit system is studied. We evaluates the effect of TID radiation to the internal high - voltage charge pumpings and their periphery circuits. The results show that the functional failures of charge pumping circuits are induced by the increasing leakage of memory array and high - voltage transistors after radiation, and leads to operation failure from the programming.
出处
《微处理机》
2014年第6期4-7,共4页
Microprocessors
关键词
闪存
高压电路
电荷泵
总剂量辐射
Flash memory
High - voltage circuits
Charge pumping
Total Ionizing Dose （TID）
