中子辐射损伤等效性研究的半导体器件选择方法

The Semiconductor Device Selection Method Based on Neutron Radiation Damage Equivalence Study

半导体器件的中子辐射效应是开展辐射损伤等效性研究的一个重要实验途径,为获得精密的辐射损伤等效系数,需要对半导体器件进行选择。在半导体器件基本选用原则的基础上,从微观机理到宏观工程应用方面阐述了器件类型的确定依据,通过实验摸索出器件性能选择条件,从器件的质量、批次、参数一致性等方面提出了改进措施,形成了比较全面的半导体器件选择方法,具有应用价值。采用该方法挑选出3DG121C双极晶体管应用于某快中子临界装置与CFBR-II堆之间的辐射损伤等效性研究,获得了等效系数为1.19,满足现阶段抗辐射加固及中子辐射效应评价需求。提出了下一步等效性研究的器件选择方向。

Neutron radiation effects of semiconductor devices is an important experimental way of carrying on ra-diation damage equivalence study, the semiconductor device have to been chosen in order to obtain the precision radiation damage equivalent coefficient.Based on the basic selection principle of the semiconductor device, from the micro mechanism to macro engineering applications the device type determining basis was expounded, and through experiment exploration the selection condition of device performance was acquired.The improved meas-ures are put forward respectively to the device quality and batch and parameter consistency.So, a semiconduc-tor device selection method was formed,that has the application value.3DG121C bipolar transistors are selected using the above method and are applied to the researches of neutron radiation damage equivalence between a fast neutron critical assembly and China Fast Burst Reactor-Ⅱ.the equivalent coefficient of 1.19 is successfully obtained, which met the present evaluation for radiation hardened and radiation effects research, and put for-ward to the next research direction of device equivalent choice.