太阳能硅片切割工艺

Study on the Process of Solar Silicon Sutting

铸造级太阳能多晶硅由于其原料纯度和制备过程中容易引入碳及氮化物杂质,引起硅片切割过程中出现跳线和断线现象,从而造成破片率偏高。通过金相显微镜和场发射扫描电镜测试硅片碎裂处表观形貌,结合X-射线能量色散谱对其进行微区元素分析,以期从原材料选择到工艺优化等方面降低硅片的破片率。

It is easy to occur wire jumper and wire breakage in the wafer cutting process because of the purity of raw materials and it is easy to introduce carbon and nitrogen impurities in solar-grade casting multi-crystalline silicon in the preparation process, so the fragmentation rate is higher. In order to reduce the silicon wafer fragment rate from selection of raw material to process optimization,the apparent morphology of the broken place in silicon wafer is tested by metallurgical microscope and field emission scanning electron microscope,the elements in microdomains are analyzed by using energy dispersive X-ray spectrum analysis.