GaN HFET的大信号射频工作模型(续)
Large Signal RF Operation Model for GaN HFET(Continued)
摘要
3短栅长HFET在高漏压下的能带畸变在一般的异质结能带计算中,都只考虑异质结材料生长方向的势垒变化。现在表面电势在x方向产生很大的电场梯度,该表面电场会扩展到整个异质结内,形成复杂的二维电场分布。于是在自洽求解泊松方程和薛定谔方程时就必须求解二维泊松方程。
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2014年第6期503-509,共7页
Research & Progress of SSE
基金
国家自然科学基金资助项目(61076120,61106130)
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共引文献4
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