期刊文献+

基于高速忆阻的超宽带信号电路

UWB Signal Circuit Based on a High-speed Memristor
下载PDF
导出
摘要 基于高速忆阻器件中拟合出的实验模型,构建SPICE模型,仿真了其忆阻特性,并利用这种高速忆阻器件设计了超宽带信号电路,模拟出了基于该忆阻模型的超宽带信号电路的频谱特性。结果表明其输出信号具有超过2GHz的带宽,该模型电路拓宽了超宽带的应用,具有较大的实用性。 A SPICE model is built on the basis of the model of the real high-speed memristor device obtained by fitting the experiment in this paper. The device characterization of the mem- ristor is simulated. The UWB signal circuit is designed by utilizing this high-speed memristor de- vice. And its spectral characteristic of output signal based on the memristor model is simulated. The signal has a bandwidth of more than 2 GHz. The circuit broadens the application of ultra wideband, and provides great practicality.
作者 李端 李少甫
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2014年第6期531-534,575,共5页 Research & Progress of SSE
关键词 忆阻 模型 SPICE 超宽带信号 memristor model SPICE ultra wideband (UWB) signal
  • 相关文献

参考文献9

  • 1Federal Communications Commission,Revision of Part15of the Commission′s Rules Regarding Ultra-Wideband Transmission Systems:First Report and Order.Technical Report[R].Washington:FCC,2002:2-48.
  • 2Chua L O.Memristor—the missing circuit element[J].IEEE Transactions on Circuit Theory,1971,18(5):507-519.
  • 3Strukov D B,Snider G S,Stewart D R,et al.The missing memristor found[J].Nature,2008,453(7191):80-83.
  • 4Antonio C Torrezan,John Paul Strachan,Gilberto Medeiros-Ribeiro,et al.Sub-nanosecond switching of a tantalum oxide memristor[J].Nanotechnology,2011,22(485203):3-4.
  • 5Patrick R Mickel,Andrew J Lohn,Byung Joon Choi,et al.A physical model of switching dynamics in tantalum oxide memristive devices[J].Applied Physics Letters,2013,102(22):223502-1.
  • 6Feng Miao,John Paul Strachan,J Joshua Yang,et al.Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor[J].Advanced Materials,2011,23(47):5633-5634.
  • 7Lee Myoung-Jae,Lee Chang Bum,Lee Dongsoo,et al.A fast,high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures[J].Nature Materials,2011,10(8):625-630.
  • 8John Paul Strachan,Antonio C Torrezan,Feng Miao,et al.State dynamics and modeling of tantalum oxide memristors[J].IEEE Transactions on Electron Devices,2013,60(7):2194-2200.
  • 9Chris Yakopcic,Tarek M Taha,Guru Subramayam,et al.Memristor SPICE model and crossbar simulation based on devices with nanosecond switching time[C].International Joint Conference on Neural Networks,2013:1-7.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部