摘要
利用硫化铵溶液对GaAs HEMT/PHEMT器件进行表面硫化处理,并利用硫酸锌溶液进行固化;相对于传统的氨水表面处理,经过此处理的器件获得了更高的直流脉冲比,并保持相当高的击穿电压。分析表明,这样的改善来源于表面硫化处理对砷化镓表面态能级的抬高。
By adopting the ammonium sulfide surface treatment and zinc sulfate solution so- lidification ,GaAs HEMT / PHEMT devices demonstrate a high breakdown voltage and a high pulse ratio simultaneously. Analysis shows that this improvement comes from the elevation of surface state energy levels due to the vulcanization process.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2014年第6期590-593,共4页
Research & Progress of SSE
关键词
表面态
击穿电压
脉冲比
表面硫化
surface state
breakdown voltage
pulse ratio
surface sulfide
