0.18μm BCD工艺平台LogicEE IP的数据保持力

The Data Retention Characteristic Study of LogicEE IP on 0.18μm BCD Process Platform

研究表明,0.18μm BCD工艺中SAB膜的厚度对Logic EE IP的数据保持力特性有重大影响。SAB膜越厚,Logic EE IP的数据保持力特性越好;如果SAB膜厚度小于一定尺寸,那么Logic EE IP的数据保持力将会失效。因此适当的SAB膜厚度对保证Logic EE IP的数据保持力通过合格性测试非常重要。主要研究在标准工艺条件下,通过3种SAB膜厚(标准厚度55 nm、80 nm和100 nm)、老衬底(标准厚度55 nm)、新衬底延长清洗时间(标准厚度55 nm)以及新衬底新生长材料的SAB膜(标准厚度55 nm)等试验,最终确定了在华虹宏力0.18μm BCD工艺平台上,当SAB膜厚度为100 nm时,Logic EE IP核的数据保持力通过了JEDEC标准的合格性测试。

Research shows that： SAB film of HHGrace＇s 0.18 μm BCD process plays an important role in the data retention characteristic of Logic EE IP. SAB film thicker, data retention performance of Logic EE IP is better. If SAB film thickness is lower than one value, the data retention of Logic EE IP would fail. So the proper SAB film thickness will be an important factor to the data retention qualification test of Logic EE IP. The article mainly studies what Logic EE IP＇s data retention performance would be under 6 different conditions： 3 different thickness SAB film（standard 55 nm 80 nm and 100 nm）, old substrate（standard 55 nm）, longer cleaning time（standard 55 nm）, more compact SAB film material（standard 55 nm）. Finally experiment confirmed, when the thickness of SAB film is 100 nm, the data retention test of this Logic EE IP has passed.