基于GaAs PHEMT的5～12 GHz收发一体多功能芯片

5-12 GHz Multi-Function Transmit / Receive Chip Based on GaAs PHEMTs

基于GaAs赝高电子迁移率晶体管（PHEMT）工艺,研制了一种5-12 GHz的收发一体多功能芯片（T/R MFC）,其具有噪声低、增益高和中等功率等特点。电路由低噪声放大器和多个单刀双掷（SPDT）开关构成。为了获得较低的噪声系数和较大的增益,低噪声放大器采用自偏置三级级联拓扑结构;为了获得较高的隔离度和较低的插入损耗,SPDT开关采用串并联结构。测试结果表明,在5-12 GHz频段内,收发一体多功能芯片的小信号增益大于26 d B,噪声系数小于4 d B,输入/输出电压驻波比小于2.0,1 d B压缩点输出功率大于15 d Bm。其中,放大器为单电源5 V供电,静态电流小于120 m A;开关控制电压为-5 V/0 V。芯片尺寸为2.65 mm×2.0 mm。

Based on the GaAs pseudomorphic high electron mobility transistor （PHEMT） technology, a 5- 12 GHz transmit/receive multi-function chip （T/R MFC ） was developed. The chip has the characteristics of low noise, high gain and medium power. The circuit includes a low noise amplifier （LNA） and sing-pole double-throw （SPDT） switches. In order to obtain lower noise figure and higher gain, the LNA was designed with the three-stage amplifier in self-biased structure. And in order to obtain higher isolation and lower insertion loss, the SPDT switch was designed with the series and parallel structure. The test results of the MFC show that in the frequency range of 5-12 GHz, the small signal gain of the T/R MFC is higher than 26 dB, noise figure is less than 4 dB, both the input and output voltage standing wave ratio （VSWR） are less than 2.0, and the output power is more than 15 dBm at 1 dB compression. Besides, the LNA can be directly driven by a single 5 V supply, and the quiescent current is less than 120 mA. The control voltage of the switch is -5 V/0 V. The chip area is 2. 65 mm×2. 0 ram.