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一种新的SPICE BSIM3v3 HCI可靠性模型的建立及参数优化 被引量：1

A New SPICE BSIM3v3 HCI Reliability Model of MOSFET and Parameter Optimization
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摘要 研究中提出了用于描述HCI(热载流子注入)效应的MOSFET可靠性模型及其建模方法,在原BSIM3模型源代码中针对7个主要参数,增加了其时间调制因子,优化并拟合其与HCI加压时间(Stress time)的关系式,以宽长比为10μm/0.5μm5 V的MOSFET为研究对象,在开放的SPICE和BSIM3源代码对模型库文件进行修改,实现了该可靠性模型。实验表明,该模型的测量曲线与参数提取后的I-V仿真曲线十分吻合,因而适用于预测标准工艺MOS器件在一定工作电压及时间下性能参数的变化,进而评估标准工艺器件的寿命。 An innovative modeling method is presented for describing BSIM3v3 SPICE reliability model of MOSFET due to hot carrier injection. Seven main parameters associated with HCI are optimized in Original BSIM3v3 source code,and increased their relevant time modulating coefficient which can be acquired seven equations. In this work,5 V operating voltage n MOSFET with 10 μm gate length and 0. 5 μm gate width is prepared. The I-V simulation curve after parameters extraction fit the measured results very well,so an accurate new model of MOSFETs reliability model is achieved. Using the BSIM3v3 SPICE reliability model,the typical Idsat,Vth,Idlin,Gmaxdegradation as a function of stress time is plotted（ achieved） and the lifetime of MOSFETs can be evaluated.
作者 禹玥昀 林宏 赵同林 狄光智 石艳玲
机构地区 西南林业大学计算机与信息学院 华东师范大学信息科技与技术学院
出处 《电子器件》 CAS 北大核心 2014年第6期1049-1053,共5页 Chinese Journal of Electron Devices
关键词 SPICE模型 BSIM3v3模型 热载流子注入(HCI) 可靠性 参数 MOSFET HCI reliability SPICE model BSIM3v3 model
分类号 TN304.02 [电子电信—物理电子学]
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参考文献12

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电子器件
2014年 第6期

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