摘要
为了研究0.13μm体硅工艺的抗总剂量效应加固,分别对两种结构的H形管的性能做了仿真研究。仿真结果表明,两种结构的H形管有基本相同的转移特性曲线,但有一种结构的H形管有较大的饱和电流;同时,此结构的H形管还有较强的抗总剂量性能,可考虑在抗辐照要求的集成电路中使用。
Two different structures of H-gate MOSFETs' performances are simulated,which are used to study total dose radiation hardness of commercial 0. 13 μm CMOS process. Simulation results show that two kinds of different H-gate MOSFETs have basically same transfer characteristics curves. But one of two structures H-gate MOSFETs has bigger saturation current and radiation-hardened for radiation applications. This kind of H-gate MOSFETs could be considered to be used in the radiation hardened ICs.
出处
《电子器件》
CAS
北大核心
2014年第6期1054-1056,共3页
Chinese Journal of Electron Devices
关键词
抗辐照
总剂量效应
H形管
radiation hardened
total ionizing dose effect
H-gate transistor